d a t a sh eet product speci?cation 2002 mar 14 discrete semiconductors PDTA143XEF pnp resistor-equipped transistor; r1 = 4.7 k w , r2=10k w m3d425
2002 mar 14 2 philips semiconductors product speci?cation pnp resistor-equipped transistor; r1 = 4.7 k w , r2 = 10 k w PDTA143XEF features built-in bias resistors 250 mw total power dissipation very small 1.6 0.85 0.7 mm package flat leads excellent coplanarity improved thermal behaviour reduces number of components and required pcb area. applications general purpose switching and amplification inverter and interface circuits driver circuits. description pnp resistor-equipped transistor in a sot490 (sc-89) plastic package. marking type number marking code PDTA143XEF 41 pinning pin description 1 base/input 2 emitter/ground (+) 3 collector/output handbook, halfpage mam413 1 2 3 r1 r2 12 top view 3 fig.1 simplified outline (sot490) and symbol. mga893 - 1 1 3 2 fig.2 equivalent inverter symbol. quick reference data symbol parameter max. unit v ceo collector-emitter voltage - 50 v i o output current (dc) - 100 ma r1 bias resistor 4.7 k w r2 bias resistor 10 k w
2002 mar 14 3 philips semiconductors product speci?cation pnp resistor-equipped transistor; r1 = 4.7 k w , r2=10k w PDTA143XEF limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. for mounting conditions, see thermal considerations and footprint design for sot490 in the sc18 data handbook . thermal characteristics note 1. for mounting conditions, see thermal considerations and footprint design for sot490 in the sc18 data handbook . characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 50 v v ceo collector-emitter voltage open base -- 50 v v ebo emitter-base voltage open collector -- 10 v v i input voltage positive - +7 v negative -- 20 v i o output current (dc) -- 100 ma i cm peak collector current -- 100 ma p tot total power dissipation t amb 25 c; note 1 - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air; note 1 500 k/w symbol parameter conditions min. typ. max. unit i cbo collector-base cut-off current v cb = - 50 v; i e =0 --- 100 na i ceo collector-emitter cut-off current v ce = - 30 v; i b =0 --- 1 m a v ce = - 30 v; i b = 0; t j = 150 c --- 50 m a i ebo emitter-base cut-off current v eb = - 5 v; i c =0 --- 0.6 ma h fe dc current gain v ce = - 5 v; i c = - 10 ma 50 -- v cesat collector-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma --- 150 mv v i(off) input off voltage v ce = - 5 v; i c = - 100 m a --- 0.3 v v i(on) input on voltage v ce = - 0.3 v; i c = - 20 ma - 2.5 -- v r1 input resistor 3.3 4.7 6.1 k w resistor ratio 1.7 2.1 2.6 c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz -- 3pf r2 r1 ------- -
2002 mar 14 4 philips semiconductors product speci?cation pnp resistor-equipped transistor; r1 = 4.7 k w , r2=10k w PDTA143XEF handbook, halfpage 10 3 10 10 2 1 mgr818 - 10 - 1 - 1 - 10 - 10 2 i c (ma) h fe (2) (3) (1) fig.3 dc current gain as a function of collector current; typical values. v ce = - 5v. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 40 c. handbook, halfpage mgr821 i c (ma) v cesat (mv) - 10 3 - 10 2 - 10 - 1 - 10 - 10 2 (2) (3) (1) fig.4 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 40 c. handbook, halfpage - 2 0 mgr819 - 0.4 - 0.8 - 1.2 - 1.6 - 10 - 2 - 10 - 1 - 1 - 10 i c (ma) v i(off) (v) (2) (3) (1) fig.5 input-off voltage as a function of collector current; typical values. v ce = - 5v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 40 c. handbook, halfpage - 10 0 mgr820 (2) - 2 - 4 - 6 - 8 v i(on) (v) - 10 - 1 - 1 - 10 - 10 2 i c (ma) (3) (1) fig.6 input-on voltage as a function of collector current; typical values. v ce = - 0.3 v. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 40 c.
2002 mar 14 5 philips semiconductors product speci?cation pnp resistor-equipped transistor; r1 = 4.7 k w , r2=10k w PDTA143XEF package outline unit b p cd e e 1 h e l p w v references outline version european projection issue date 98-10-23 iec jedec eiaj mm 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 0.5 e 1.0 1.7 1.5 0.1 0.1 dimensions (mm are the original dimensions) 0.5 0.3 sot490 sc-89 b p d e 1 e a l p detail x h e e w m v m a b a b 0 1 2 mm scale a 0.8 0.6 c x 12 3 plastic surface mounted package; 3 leads sot490
2002 mar 14 6 philips semiconductors product speci?cation pnp resistor-equipped transistor; r1 = 4.7 k w , r2=10k w PDTA143XEF data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. data sheet status (1) product status (2) definitions objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 mar 14 7 philips semiconductors product speci?cation pnp resistor-equipped transistor; r1 = 4.7 k w , r2=10k w PDTA143XEF notes
? koninklijke philips electronics n.v. 2002 sca74 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 613514/01/pp 8 date of release: 2002 mar 14 document order number: 9397 750 09369
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